Description
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.
FEATUREs
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
APPLICATION
Switching applications
Part Name
Description
View
MFG CO.
N-channel 620 V, 2.5 ? , 2.5 A SuperMESH3? Power MOSFET DPAK, TO-220FP, TO-220, IPAK
STATEK CORPORATION
N - CHANNEL 500V - 2.5 ? - 2.5 A - TO-220 PowerMESH? MOSFET
STMicroelectronics
N-channel 620 V, 2.2 ? , 2.7 A SuperMESH3? Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
STMicroelectronics
N-channel 620 V, 2.2 ? , 2.7 A SuperMESH3? Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK ( Rev : 2009 )
STMicroelectronics
N-channel 800 V, 3.8 ?, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH? Power MOSFET
STMicroelectronics
N-channel 620 V, 1.28 ?, 4.2 A SuperMESH3? Power MOSFET DPAK, DPAK,TO-220FP, TO-220 and IPAK
STMicroelectronics
N-channel 525 V, 2.5 A, 2.1 ? typ., SuperMESH3? Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 800 V, 2.8 ? typ., 2.5 A MDmesh? K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
STMicroelectronics
N-channel 525 V, 0.95 ?, 6 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3? Power MOSFET
STMicroelectronics
N-channel 620 V, 1.28 ? typ., 4.2 A MDmesh? K3 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2018 )
STMicroelectronics