Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 500 V, 0.2 ? typ., 14 A MDmesh? II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.17 ? typ., 17 A FDmesh? II Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 600 V, 0.28 ? typ., 11 A MDmesh? II Power MOSFET in TO-220FP, IPAK, TO-220, IPAK, TO-247 packages
STMicroelectronics
N-channel 600 V, 0.145 ? typ., 21 A, FDmesh? II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.168 ? typ., 17 A MDmesh? II Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.13 ? typ., 23 A FDmesh? II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 500 V, 0.28 ? typ., 12 A MDmesh? II Power MOSFETs in TO-220FP, IPAK and TO-220 packages ( Rev : 2014 )
STMicroelectronics
N-channel 500 V, 0.162 ?, 17 A TO-220, TO-220FP, TO-247, DPAK MDmesh? II Power MOSFET
STMicroelectronics
N-channel 500 V, 0.135 ?, 21 A DPAK, TO-220, TO-220FP, TO-247 MDmesh? II Power MOSFET
STMicroelectronics
N-channel 500 V, 0.28 ? typ., 12 A MDmesh? II Power MOSFET in DPAK, DPAK, TO-220FP, IPAK and TO-220 packages
STMicroelectronics