Part Name
STP24NM60N
Description
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page
19 Pages
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MFG CO.
STMicroelectronics
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STP24NM60N(2011) Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
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N-channel 600 V - 0.17 ? - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh? Power MOSFET
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N-channel 600 V, 0.13 ?, 21 A FDmesh? II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
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N-channel 600 V, 0.1 ?, 25 A, MDmesh? II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
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N-channel 600 V - 0.27 ? - 14 A - FDmesh? II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
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N-channel 600 V, 0.2 ?, 16 A MDmesh? II Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220 and TO-247
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N-channel 600 V, 0.17 ? typ., 17 A FDmesh? II Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
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