Description
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
Part Name
Description
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MFG CO.
N-channel 600 V - 0.13 Ω - 21 A FDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247 ( Rev : 2008 )
STMicroelectronics
N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
STMicroelectronics
N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2008 )
STMicroelectronics
N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
STMicroelectronics
N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
STMicroelectronics
N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
STMicroelectronics
N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220 and TO-247
STMicroelectronics
N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
STMicroelectronics
N-channel 500 V, 0.090 Ω, 27 A MDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2008_09 )
STMicroelectronics
N-channel 500 V, 0.11 Ω, 22 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
STMicroelectronics