Part Name
STP21NM60ND
Other PDF
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22 Pages
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1.3 MB
MFG CO.
STMicroelectronics
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STP21NM60ND(2013) Datasheet - STMicroelectronics
STMicroelectronics
Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Intrinsic fast-recovery body diode
• Worldwide best RDS(on)*area amongst the fast
recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.168 ? typ., 17 A MDmesh? II Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packages
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N-channel 600 V, 0.145 ? typ., 21 A, FDmesh? II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages
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N-channel 600 V, 0.13 ? typ., 23 A FDmesh? II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages
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N-channel 600 V, 0.28 ? typ., 11 A MDmesh? II Power MOSFET in TO-220FP, IPAK, TO-220, IPAK, TO-247 packages
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N-channel 800 V, 0.25 ?, 17 A, MDmesh? Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packages
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N-channel 500 V, 0.1 ? typ., 22 A MDmesh? II Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 packages
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N-channel 600 V, 0.135 ? typ., 20 A MDmesh? II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
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N-channel 600 V, 0.168 ?, 17 A MDmesh? II Power MOSFET TO-220FP, I2PAK, TO-220 and TO-247 ( Rev : 2011 )
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N-channel 600 V, 0.20 ? typ., 16 A MDmesh? II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
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N-channel 600 V, 0.27 ?, 13 A MDmesh? II Power MOSFET in TO-220, TO-220FP, TO-247, DPAK and IPAK
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