Description
The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
FEATUREs
■ DPAK worldwide best RDS(on)
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
APPLICATION
Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.27 ?, 13 A MDmesh? II Power MOSFET in TO-220, TO-220FP, TO-247, DPAK and IPAK
STMicroelectronics
N-channel 650 V, 0.56 ?, 7 A MDmesh? V Power MOSFET in DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAK
STMicroelectronics
N-channel 650 V, 0.56 ? typ., 7 A MDmesh? V Power MOSFET in DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAK packages ( Rev : 2012 )
STMicroelectronics
N-channel 525 V, 1 ?, 5 A, DPAK, DPAK, TO-220FP, TO-220 SuperMESH3? Power MOSFET
STMicroelectronics
N-channel 500 V, 0.24 ? typ., 13 A MDmesh? M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 500 V, 0.24 ? typ., 13 A MDmesh? M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 620 V, 1.28 ?, 4.2 A SuperMESH3? Power MOSFET DPAK, DPAK,TO-220FP, TO-220 and IPAK
STMicroelectronics
N-channel 650 V, 0.095 ?, 24 A, MDmesh? V Power MOSFET in DPAK, IPAK, TO-220FP, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.085 ?, 27 A, MDmesh? V Power MOSFET in DPAK, TO-220FP, IPAK, TO-220, TO-247
STMicroelectronics
N-channel 500 V, 0.28 ? typ., 12 A MDmesh? II Power MOSFET in DPAK, DPAK, TO-220FP, IPAK and TO-220 packages
STMicroelectronics