STP12NM50FD Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
General features
■ 100% avalanche tested
■ High dv/dt and avalanche capabilities
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Tight process control and high manufacturing yields
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Part Name
Description
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MFG CO.
N-channel 500V - 0.15? - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh? Power MOSFET
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N-channel 600V - 0.35? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh? Power MOSFET
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N-channel 600V - 0.45? - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESH? Power MOSFET
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N-channel 650V - 0.25? - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh? Power MOSFET
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N-channel 600V - 0.270? - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh? Power MOSFET
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N-channel 600 V - 0.150 ? - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh? II Power MOSFET (with fast diode) ( Rev : 2008 )
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N-channel 500V - 0.34? - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET
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