Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
• LCC converters, resonant converters
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.076 ? typ., 34 A MDmesh? M2 EP Power MOSFETs in DPAK, TO-220 and TO-247 packages ( Rev : 2015 )
STMicroelectronics
N-channel 600 V, 0.076 ? typ., 34 A MDmesh? M2 EP Power MOSFETs in DPAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.15 ? typ., 20 A MDmesh? M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 70 m? typ., 33 A, MDmesh M5 Power MOSFETs in DPAK, TO-220FP, IPAK, TO-220 and TO-247 packages ( Rev : 2019 )
STMicroelectronics
N-channel 650 V, 0.117 ? typ., 24 A MDmesh? M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 600 V, 0.14 ? typ., 20 A MDmesh? M2 Power MOSFETs in TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.13 ? typ., 21 A MDmesh? DM2 Power MOSFETs in DPAK, TO-220 and TO-247 packages ( Rev : 2017 )
STMicroelectronics
N-channel 600 V, 0.13 ? typ., 21 A MDmesh? DM2 Power MOSFETs in DPAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.145 ? typ., 21 A, FDmesh? II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.168 ? typ., 17 A MDmesh? II Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packages
STMicroelectronics