Part Name
STH110N10F7-2
Description
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MFG CO.
STMicroelectronics
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STH110N10F7-2 Datasheet - STMicroelectronics
STMicroelectronics
Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
APPLICATIONs
• Switching applications
Part Name
Description
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