Part Name
STB100N6F7
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MFG CO.
STMicroelectronics
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STB100N6F7 Datasheet - STMicroelectronics
STMicroelectronics
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
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N-channel 100 V, 2.85 m? typ., 110 A STripFET? F7 Power MOSFET in a TO-220 package
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N-channel 100 V, 0.02 ? typ., 32 A STripFET? F7 Power MOSFET in a TO-220 package
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N-channel 60 V, 4.2 m? typ., 80 A STripFET? F7 Power MOSFET in a TO-220 package
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