Part Name
STD80N6F6
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15 Pages
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MFG CO.
STMicroelectronics
STD80N6F6(2014) Datasheet - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
• Designed for automotive applications and
AEC-Q101 qualified
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
APPLICATIONs
• Switching applications
Part Name
Description
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