STD30NE06L Datasheet - STMicroelectronics

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
   
■ TYPICAL RDS(on) = 0.025 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100°C
■ APPLICATION ORIENTED
    CHARACTERIZATION
■ ADD SUFFIX "T4" FOR ORDERING IN TAPE
    & REEL