STD30NE06 Datasheet - STMicroelectronics

DESCRIPTION
This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
   
■ TYPICAL RDS(on) = 0.025 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 °C
■ APPLICATION ORIENTED
    CHARACTERIZATION
■ FOR TAPE & REEL AND OTHER
    PACKAGING OPTIONS CONTACT SALES
    OFFICES