Part Name
STB23NM60ND
Other PDF
PDF
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18 Pages
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810.6 kB
MFG CO.
STMicroelectronics
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STB23NM60ND Datasheet - STMicroelectronics
STMicroelectronics
Description
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with a n intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
FEATUREs
■ The worldwide best RDS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
APPLICATION
Switching applications
Part Name
Description
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