STB130NS04ZB(2005) Datasheet - STMicroelectronics

DESCRIPTION
This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment .Any other application requiring extra ruggedness is also recommended.

General Features
■ TYPICAL RDS(on) = 7 mΩ
■ 100% AVALANCHE TESTED
■ LOW CAPACITANCE AND GATE CHARGE
■ 175°C MAXIMUM JUNCTION TEMPERATURE

APPLICATIONS
■ HIGH SWITCHING CURRENT
■ LINEAR APPLICATIONS