Part Name
P60NS04ZB
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13 Pages
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231.2 kB
MFG CO.
STMicroelectronics
P60NS04ZB Datasheet - STMicroelectronics
STMicroelectronics
Description
This fully clamped Power MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable
for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.
■ 100% avalanche tested
■ Low capacitance and gate charge
■ 175 °C maximum junction temperature
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