Part Name
STB10NK60Z
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MFG CO.
STMicroelectronics
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STB10NK60Z(2012) Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs wellestablished strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
FEATUREs
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Zener-protected
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
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N-channel 600 V, 0.17 ?, 17 A FDmesh? II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
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N-channel 600 V, 0.130 ? , 21 A, MDmesh? II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
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N-channel 600 V, 0.2 ?, 16 A MDmesh? II Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220 and TO-247
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N-channel 600 V, 0.13 ?, 21 A FDmesh? II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
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N-channel 600 V, 0.1 ?, 25 A, MDmesh? II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
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