PD85006-E Datasheet - STMicroelectronics

Description
The PD85006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85006-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package.
PowerSO-10RF’s superior linearity performance makes it an ideal solution for mobile radio applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf (search for AN1294).

FEATUREs
■ Excellent thermal stability
■ Common source configuration
■ Broadband performances:
   POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european
   directive