Part Name
PD57002-E
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page
19 Pages
File Size
493.1 kB
MFG CO.
STMicroelectronics
PD57002-E(2012) Datasheet - STMicroelectronics
STMicroelectronics
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity.
FEATUREs
■ Excellent thermal stability
■ Common source configuration
■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V
■ New RF plastic package
Part Name
Description
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