Part Name
NAND08GW3C2B
Other PDF
no available.
PDF
page
60 Pages
File Size
1.1 MB
MFG CO.
Numonyx -> Micron
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NAND08GW3C2B Datasheet - Numonyx -> Micron
Numonyx -> Micron
Description
The NAND08GW3C2B and NAND16GW3C4B are multilevel cell (MLC) devices from the NAND Flash 2112-byte page family of non-volatile Flash memories. The NAND08GW3C2B and the NAND16GW3C4B have a density of 8- and 16-Gbit, respectively. The NAND16GW3C4B is composed of two 8-Gbit dice; each die can be accessed independently using two Chip Enable and two Ready/Busy signals. The devices operate from a 3 V VDD power supply.
The address lines are multiplexed with the data input/output signals on a multiplexed x8 input/output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.
Each block can be programmed and erased over 10,000 cycles (with error correction code (ECC) on). The device also has hardware security features; a write protect pin is available to provide hardware protection against program and erase operations.
Part Name
Description
View
MFG CO.
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
Numonyx -> Micron
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
Numonyx -> Micron
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory ( Rev : 2006 )
STMicroelectronics
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
STMicroelectronics
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
STMicroelectronics
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory
Numonyx -> Micron
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
Numonyx -> Micron
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