NAND08GW3C2A Datasheet - Numonyx -> Micron

Description
   The NAND08GW3C2A and NAND16GW3C2A are multilevel cell (MLC) devices from the NAND Flash 2112-byte page family of non-volatile Flash memories. The NAND08GW3C2A and the NAND16GW3C2A have a density of 8- and 16-Gbit, respectively. The NAND16GW3C2A is composed of two 8-Gbit dice; each die can be accessed independently using two Chip Enable and two Ready/Busy signals. The devices operate from a 3 V VDD power supply.

   The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 input/output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.

   Each block can be programmed and erased over 10,000 cycles (with ECC on). The device also has hardware security features; a write protect pin is available to give hardware protection against Program and Erase operations.

   The devices feature an open-drain, ready/busy output that can be used to identify if the Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output allows the ready/busy pins of several memories to be connected to a single pull-up resistor.