MJD31C Datasheet - Nexperia B.V. All rights reserved

General description
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

PNP complement: MJD32C

FEATUREs and benefits
• High thermal power dissipation capability
• High energy efficiency due to less heat generation
• Electrically similar to popular MJD31 series
• Low collector emitter saturation voltage
• Fast switching speeds

APPLICATIONs
• Power management
• Load switch
• Linear mode voltage regulator
• Constant current drive backlighting application
• Motor drive
• Relay replacement