HOME >>> Nexperia B.V. All rights reserved >>>
MJD41C PDF
MJD41C Datasheet - Nexperia B.V. All rights reserved
MFG CO.

Nexperia B.V. All rights reserved
General description
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.
PNP complement: MJD42C
FEATUREs and benefits
• High thermal power dissipation capability
• High energy efficiency due to less heat generation
• Electrically similar to popular MJD41 series
• Low collector emitter saturation voltage
• Fast switching speeds
APPLICATIONs
• Power management
• Load switch
• Linear mode voltage regulator
• Constant current drive backlighting application
• Motor drive
• Relay replacement
Part Name
Description
View
MFG CO.
100 V, 6 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A NPN high power bipolar transistor
NXP Semiconductors.
100 V, 6 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A PNP high power bipolar transistor
NXP Semiconductors.
100 V, 6 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
100 V, 6 A PNP high power bipolar transistor
Nexperia B.V. All rights reserved
60 V, 6 A NPN high power bipolar transistor
Nexperia B.V. All rights reserved