M58WR032EB80ZB6T Datasheet - STMicroelectronics

SUMMARY DESCRIPTION
   The M58WR032E is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY
◾ SUPPLY VOLTAGE
   – VDD = 1.65V to 2.2V for Program, Erase
      and Read
   – VDDQ = 1.65V to 3.3V for I/O Buffers
   – VPP = 12V for fast Program (optional)
◾ SYNCHRONOUS / ASYNCHRONOUS READ
   – Synchronous Burst Read mode: 54MHz
   – Asynchronous/ Synchronous Page Read
      mode
   – Random Access: 70, 80, 100ns
◾ PROGRAMMING TIME
   – 8µs by Word typical for Fast Factory
      Program
   – Double/Quadruple Word Program option
   – Enhanced Factory Program options
◾ MEMORY BLOCKS
   – Multiple Bank Memory Array: 4 Mbit
      Banks
   – Parameter Blocks (Top or Bottom
      location)
◾ DUAL OPERATIONS
   – Program Erase in one Bank while Read in
      others
   – No delay between Read and Write
      operations
◾ BLOCK LOCKING
   – All blocks locked at Power up
   – Any combination of blocks can be locked
   – WP for Block Lock-Down
◾ SECURITY
   – 128 bit user programmable OTP cells
   – 64 bit unique device number
   – One parameter block permanently
      lockable
◾ COMMON FLASH INTERFACE (CFI)
◾ 100,000 PROGRAM/ERASE CYCLES per
   BLOCK
◾ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Top Device Code, M58WR032ET: 8814h
   – Bottom Device Code, M58WR032EB:
      8815h