M58WR128EB10ZB6T Datasheet - STMicroelectronics

SUMMARY DESCRIPTION
The M58WR128E is a 128 Mbit (8Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VDD = 1.65V to 2.2V for Program, Erase and Read
    – VDDQ = 1.65V to 3.3V for I/O Buffers
    – VPP = 12V for fast Program (optional)
■ SYNCHRONOUS / ASYNCHRONOUS READ
    – Synchronous Burst Read mode: 54MHz
    – Asynchronous/ Synchronous Page Read mode
    – Random Access: 70, 80, 100ns
■ SYNCHRONOUS BURST READ SUSPEND
■ PROGRAMMING TIME
    – 8µs by Word typical for Fast Factory Program
    – Double/Quadruple Word Program option
    – Enhanced Factory Program options
■ MEMORY BLOCKS
    – Multiple Bank Memory Array: 4 Mbit Banks
    – Parameter Blocks (Top or Bottom location)
■ DUAL OPERATIONS
    – Program Erase in one Bank while Read in others
    – No delay between Read and Write operations
■ BLOCK LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WP for Block Lock-Down
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device number
    – One parameter block permanently lockable
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M58WR128ET: 881Eh
    – Bottom Device Code, M58WR128EB: 881Fh