LS830 Datasheet - Linear Technology
MFG CO.
Linear Technology
FEATURES
ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max.
ULTRA LOW NOISE IG=80fA TYP.
LOW NOISE en=70nV/√Hz TYP.
LOW CAPACITANCE CISS=3pf max.
Part Name
Description
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MFG CO.
Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER ( Rev : 2014 )
Linear Technology
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Technology
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Linear Technology
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
Linear Integrated System
