LS5905 Datasheet - Linear Technology
MFG CO.
Linear Technology
FEATURES
LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max.
ULTRA LOW LEAKAGE IG = 150fA TYP.
LOW PINCHOFF VP= 2V TYP.
Part Name
Description
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MFG CO.
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
Linear Technology
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Linear Technology
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
