IXKC13N80C Datasheet - IXYS CORPORATION

CoolMOS Power MOSFET ISOPLUS220™

Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low RDS(on), High Voltage MOSFET

FEATUREs
• Silicon chip on Direct-Copper-Bond
   substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
• 3RD generation CoolMOS power MOSFET
   - High blocking capability
   - Low on resistance
   - Avalanche rated for unclamped inductive
      switching (UIS)
• Low thermal resistance due to reduced
   chip thickness
• Low drain to tab capacitance(<30pF)

APPLICATIONs
• Switched Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC)
• Welding
• Inductive Heating

Advantages
• Easy assembly: no screws or isolation
   foils required
• Space savings
• High power density