IRF640T Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources
General features
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
APPLICATIONs
■ Switching application
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