IRF640S Datasheet - STMicroelectronics

DESCRIPTION
This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAYprocess. This technology matches and improves the performances compared with
standard parts from various sources.

■ TYPICAL RDS(on)= 0.150Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.