BULT106D(2008) Datasheet - STMicroelectronics

Description
The device is manufactured using multi-epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.

FEATUREs
■ NPN transistor
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed

APPLICATIONs
■ Compact fluorescent lamps at 110V A.C. mains
■ Flyback and forward single transistor low power
   converters at 110V A.C. mains