BULK128 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
FEATUREs
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
APPLICATIONs
■ Electronic ballast for fluorescent lighting
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Part Name
Description
View
MFG CO.
High-Voltage Fast-Switching NPN Power Transistor
ON Semiconductor
High voltage fast-switching NPN power transistor
STMicroelectronics
High voltage fast-switching NPN power transistor ( Rev : 2021 )
STMicroelectronics
High voltage fast-switching NPN power transistor
STMicroelectronics
High voltage fast-switching NPN power transistor
STMicroelectronics
High voltage fast-switching NPN power transistor
STMicroelectronics
High voltage fast-switching NPN power transistor
STMicroelectronics
High voltage fast-switching NPN power transistor
STMicroelectronics
High voltage fast-switching NPN power transistor
STMicroelectronics
High voltage fast-switching NPN power transistor ( Rev : 2007 )
STMicroelectronics