Description
The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” advanced technology.
FEATUREs
■ Very high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Low intrinsic capacitances
■ Fast internal recovery diode
APPLICATION
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.85 ?, 4.6 A MDmesh? II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
STMicroelectronics
N-channel 600 V, 0.56 ?,7 A MDmesh? II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
STMicroelectronics
N-channel 600 V, 0.17 ?, 17 A FDmesh? II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2008 )
STMicroelectronics
N-channel 600 V - 0.13 ? - 21 A FDmesh? II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247 ( Rev : 2008 )
STMicroelectronics
N-channel 600 V, 0.17 ?, 17 A FDmesh? II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
STMicroelectronics
N-channel 600 V, 0.130 ? , 21 A, MDmesh? II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
STMicroelectronics
N-channel 600 V, 0.48 ?, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH? Power MOSFET
STMicroelectronics
N-channel 600 V, 0.48 ?, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH? Power MOSFET ( Rev : 2009 )
STMicroelectronics
N-channel 600 V, 0.48 ?, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH? Power MOSFET
STMicroelectronics
N-channel 600 V, 0.13 ?, 21 A FDmesh? II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
STMicroelectronics