Part Name
80N4F6
Description
Other PDF
PDF
page
18 Pages
File Size
1.4 MB
MFG CO.
STMicroelectronics
80N4F6 Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
FEATUREs
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
APPLICATIONs
• Switching applications
Part Name
Description
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