2N7002PV Datasheet - Nexperia B.V. All rights reserved

General description
   Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

FEATUREs and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology

APPLICATIONs
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits