2N7002BK Datasheet - Nexperia B.V. All rights reserved

General description
   N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

FEATUREs and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• ESD protection up to 2 kV
• AEC-Q101 qualified

APPLICATIONs
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits