STL18N60M2 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STL18N60M2

N-channel 600 V, 0.278 Ω typ., 9 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 5x6 HV package

STMicroelectronics 

STL18N60M2

Symbol

Parameter

Table 7: Source drain diode

Test conditions

Electrical characteristics

Min. Typ. Max. Unit

ISD

ISDM(1)

VSD(2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

VGS = 0 V, ISD = 13 A

ISD = 13 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

9

A

-

36 A

-

1.6 V

- 305

ns

- 3.3

µC

- 22

A

trr

Reverse recovery time

ISD = 13 A, di/dt = 100 A/µs,

- 417

ns

Qrr

Reverse recovery charge VDD = 60 V, Tj = 150 °C

- 4.6

µC

(see Figure 16: "Test circuit for

IRRM

Reverse recovery current inductive load switching and

diode recovery times")

- 22.2

A

Notes:

(1)Pulse width is limited by safe operating area.

(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5 %.

DocID026517 Rev 2

5/15

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