STL18N60M2 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL18N60M2
STMicroelectronics
STL18N60M2 Datasheet PDF : 15 Pages
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STL18N60M2
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
VGS
ID(1)
ID(1)
IDM(2)
PTOT(2)
IAR
EAS
dv/dt(3)
dv/dt(4)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC= 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Avalanche current, repetitive or notrepetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Tstg Storage temperature range
Tj
Operating junction temperature range
Notes:
(1)The value is limited by package.
(2)Pulse width limited by safe operating area.
(3)ISD ≤ 9 A, di/dt ≤ 400 A/µs; VDS(peak) ≤ V(BR)DSS, VDD = 400 V.
(4)VDS ≤ 480 V.
Symbol
Table 3: Thermal data
Parameter
Rthj-case Thermal resistance junction-case
Rthj-pcb(1) Thermal resistance junction-pcb
Notes:
(1)When mounted on 1inch2 FR-4 board, 2 oz Cu.
Electrical ratings
Value
Unit
± 25
V
9
A
5.5
A
36
A
57
W
2
A
135
mJ
15
V/ns
50
V/ns
- 55 to 150 °C
Value
2.2
59
Unit
°C/W
°C/W
DocID026517 Rev 2
3/15
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