STL18N60M2 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL18N60M2
STMicroelectronics
STL18N60M2 Datasheet PDF : 15 Pages
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Electrical characteristics
STL18N60M2
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4: On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage
current
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
TC = 125 °C (1)
VDS = 0 V, VGS = ±25 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source
on-resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.5 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
10 µA
2
3
4
V
0.278 0.308 Ω
Notes:
(1) Defined by design, not subject to production test.
Symbol
Parameter
Ciss
Coss
Crss
Coss eq.(1)
RG
Qg
Qgs
Input capacitance
Output capacitance
Reverse transfer
capacitance
Output equivalent
capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Qgd Gate-drain charge
Table 5: Dynamic
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Min.
-
-
Typ.
791
40
Max. Unit
- pF
- pF
1.3
-
pF
VDS = 0 V to 480 V, VGS = 0 V
- 164.5 - pF
f = 1 MHz, ID = 0 A
-
5.6
-
Ω
VDD = 480 V, ID = 13 A,
- 21.5 - nC
VGS = 0 to 10 V
-
3.2
- nC
(see Figure 15: "Test circuit for
gate charge behavior")
- 11.3 - nC
Notes:
(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80 % VDS.
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off-delay time
tf
Fall time
Table 6: Switching times
Test conditions
VDD = 300 V, ID = 6.5 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 14: "Test circuit for
resistive load switching times"
and Figure 19: "Switching time
waveform")
Min. Typ. Max. Unit
-
12
-
ns
-
9
-
ns
-
47
-
ns
- 10.6 -
ns
4/15
DocID026517 Rev 2
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