STL90N3LLH6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STL90N3LLH6

N-channel 30 V, 0.0038 Ω typ., 24 A STripFET™ VI DeepGATE™ Power MOSFET in PowerFLAT™ 5x6 package

STMicroelectronics 

STL90N3LLH6

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 24 A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 12 A,

di/dt = 100 A/µs,

VDD=25 V

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

24 A

-

96 A

-

1.1 V

-

24

ns

- 16.8

nC

- 1.4

A

DocID15573 Rev 4

5/16

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