STL90N3LLH6 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL90N3LLH6
STMicroelectronics
STL90N3LLH6 Datasheet PDF : 16 Pages
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Electrical characteristics
2
Electrical characteristics
STL90N3LLH6
(TCASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On/off states
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on-
resistance
ID = 250 µA, VGS= 0
VDS = 30 V,
VDS = 30 V TC = 125 °C
VGS = ±20 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 12 A
VGS= 4.5 V, ID= 12 A
Min. Typ. Max. Unit
30
V
1
µA
10 µA
±100 nA
1 1.7
2.5
V
0.0038 0.0045 Ω
0.0057 0.0073 Ω
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
RG Gate input resistance
Table 6. Dynamic
Test conditions
VDS = 25 V, f=1 MHz,
VGS=0
Min. Typ. Max. Unit
1350 1690 2030 pF
230 290 350 pF
140 176 210 pF
VDD=15 V, ID = 24 A
VGS =4.5 V
(see Figure 14)
17
nC
8
nC
6
nC
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV 1.25 1.7
2
Ω
open drain
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
VDD=15 V, ID= 12 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
Min. Typ. Max. Unit
-
9.5
-
ns
-
30
-
ns
-
37
-
ns
-
12
-
ns
4/16
DocID15573 Rev 4
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