STL90N3LLH6 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL90N3LLH6
STMicroelectronics
STL90N3LLH6 Datasheet PDF : 16 Pages
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STL90N3LLH6
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID(1)
ID (1)
ID (1)
ID(2)
ID (2)
ID (2)
IDM(2) (3)
IDM (1) (3)
PTOT (1)
PTOT (2)
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 70 °C
Drain current (continuous) at TC = 100 °C
Drain current (continuous) at Tpcb = 25 °C
Drain current (continuous) at Tpcb= 70 °C
Drain current (continuous) at Tpcb=100 °C
Drain current (pulsed)
Drain current (pulsed)
Total dissipation at TC = 25 °C
Total dissipation at Tpcb = 25 °C
Derating factor
TJ
Operating junction temperature
Tstg
Storage temperature
1. The value is rated according to Rthj-c
2. The value is rated according to Rthj-pcb
3. Pulse width limited by safe operating area
Value
30
± 20
90
67.5
56.2
24
18
15
96
360
60
4
0.03
-55 to 150
Unit
V
V
A
A
A
A
A
A
A
A
W
W
W/°C
°C
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case (drain, steady state)
Rthj-pcb (1) Thermal resistance junction-ambient
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Value
2.08
31.3
Unit
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
Single pulse avalanche energy
EAS
(starting TJ = 25 °C, ID= 12 A; L= 1.25mH)
90
mJ
DocID15573 Rev 4
3/16
16
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