STTH5R06FP(2002) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STTH5R06FP Datasheet PDF : 8 Pages
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STTH5R06D/FP/B/G
Fig. 8: Relative variation of dynamic
parameters versus junction temperature.
Fig. 9: Transient peak forward voltage versus
dIF/dt (90% confidence).
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
IRM
Qrr
50
S factor
Tj(°C)
75
IF=IF(av)
VR=400V
Tj=125°C
VFP(V)
20
IF=IF(av)
18
Tj=125°C
16
14
12
10
8
6
4
Reference: Tj=125°C
100
125
2
0
0
dIF/dt(A/µs)
100
200
300
400
500
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
tfr(ns)
120
100
IF=IF(av)
VFR=1.1 x VF max.
Tj=125°C
80
60
40
20
0
0
dIF/dt(A/µs)
100
200
300
400
500
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
100
F=1MHz
Vosc =30mV
Tj=25°C
10
1
VR(V)
10
100
1000
Fig. 12: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
circuit board FR4, Cu=35µm) (DPAK and D2PAK).
Rth(j-a)(°C/W)
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
S(cm²)
8
10 12 14 16 18 20
4/8
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