WS27C256L 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory organized as 32K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size.

MILITARY HIGH SPEED 32K x 8 CMOS EPROM ( Rev : V2 )
STMicroelectronics
MILITARY HIGH SPEED 32K x 8 CMOS EPROM
STMicroelectronics
Military 128K x 8 CMOS EPROM
STMicroelectronics
32K x 8 CMOS EPROM Memory
MITSUBISHI ELECTRIC
256K (32K x 8) CMOS EPROM ( Rev : 2004 )
Microchip Technology
256K (32K x 8) CMOS EPROM
Microchip Technology
256K-BIT [32K x 8] CMOS EPROM
Macronix International
256K-bit CMOS EPROM (32K x 8)
Philips Electronics
32K x 8 High-Speed CMOS EPROM
Cypress Semiconductor
HIGH SPEED 32K x 8 CMOS EPROM
STMicroelectronics