datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  Vishay Semiconductors  >>> VBT1060C PDF

VBT1060C 数据手册 ( 数据表 ) - Vishay Semiconductors

VBT1060C image

零件编号
VBT1060C

Other PDF
  no available.

PDF
DOWNLOAD     

page
5 Pages

File Size
162 kB

生产厂家
VISHAYSEMICONDUCTOR
Vishay Semiconductors 

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS
    For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

Page Link's: 1  2  3  4  5 

零件编号
产品描述 (功能)
视图
生产厂家
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
PDF
Vishay Semiconductors
Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2015 )
PDF
Vishay Semiconductors

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]