TR236 数据手册 ( 数据表 ) - STMicroelectronics
生产厂家

STMicroelectronics
Description
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA.
FEATUREs
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
APPLICATIONs
■ Electronic ballast for fluorescent lighting
■ Electronic transformer for halogen lamps
High-Voltage Fast-Switching NPN Power Transistor
ON Semiconductor
High voltage fast-switching NPN power transistor
STMicroelectronics
High voltage fast-switching NPN power transistor
STMicroelectronics
High voltage fast-switching NPN power transistor
STMicroelectronics
High voltage fast-switching NPN power transistor
STMicroelectronics
High voltage fast-switching NPN power transistor ( Rev : 2007 )
STMicroelectronics
High voltage fast-switching NPN power transistor ( Rev : 2021 )
STMicroelectronics
High voltage fast-switching NPN power transistor
STMicroelectronics
High voltage fast-switching NPN power transistor
STMicroelectronics
High voltage fast-switching NPN power transistor
STMicroelectronics