STT818B 数据手册 ( 数据表 ) - STMicroelectronics

Description
The device is manufactured in low voltage PNP Planar Technology with "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.

FEATUREs
■ Very low collector to emitter saturation voltage
■ DC current gain > 100 (hFE)
■ 3 A continuous collector current (IC)

APPLICATIONs
■ Power management in portable equipments
■ Switching regulator in battery charger applications