STRH40N25FSY3 数据手册 ( 数据表 ) - STMicroelectronics

Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to improve immunity to space effect. It is therefore suitable as power switch in mainly high-efficiency DC-DC converters and Motor Control applications. It is also intended for any application with low gate charge drive requirements.

FEATUREs
■ Low RDS(on)
■ Fast switching
■ Single event effect (SEE) hardened
■ Low total gate charge
■ Light weight
■ 100% avalanche tested
■ Application oriented characterization
■ Hermetically sealed
■ Heavy ion SOA
■ 100kRad TID
■ SEL & SEGR with 34Mev/cm²/mg LET ions

APPLICATIONs
■ Satellite
■ High reliability applications