Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
N-channel 800 V, 1.3 ? typ., 4.5 A MDmesh? K5 Power MOSFETs in TO-220FP and IPAKFP packages
STMicroelectronics
N-channel 800 V, 0.95 ? typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages ( Rev : 2020 )
STMicroelectronics
N-channel 800 V, 0.37 ? typ., 12 A MDmesh? K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247
STMicroelectronics
N-channel 650 V, 0.79 ? typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 PAK packages
STMicroelectronics
N-channel 800 V, 2.1 ? typ., 3 A MDmesh? K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 650 V, 0.79 ? typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 PAK packages ( Rev : 2014 )
STMicroelectronics
N-channel 800 V, 3.5 ? typ., 2 A MDmesh? K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 650 V, 0.43 ? typ., 9 A MDmesh? M5 Power MOSFETs in a DPAK, DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 1050 V, 6 ? typ., 1.5 A MDmesh? K5 Power MOSFETs in DPAK, TO-220 and IPAK packages
STMicroelectronics
N-channel 650 V, 0.117 ? typ., 24 A MDmesh? M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics