STP4N100 数据手册 ( 数据表 ) - STMicroelectronics
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
■ TYPICAL RDS(on) = 3.1 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW INPUT CAPACITANCE
■ LOW GATE CHARGE
■ APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ CONSUMER AND INDUSTRIAL LIGHTING
■ DC-AC INVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLY (UPS)
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N-Channel Enhancement Mode Power MOS Transistor
ARTSCHIP ELECTRONICS CO.,LMITED.
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics